Micron has recently announced the introduction of its UFS 4.0 mobile storage solution, which has already been sent as qualification samples to selected smartphone manufacturers and chipset vendors worldwide.
This technology will enable the production of storage options in capacities of 256GB, 512GB, and 1TB. However, it is important to note that high-volume production is set to commence in the second half of this year, meaning it will be some time before smartphones incorporating Micron UFS 4.0 storage become available.
The UFS 4.0 storage technology from Micron is based on 232-layer TLC flash, which stands for triple-level cells that can store 3 bits per cell. The company claims that its six-plane NAND architecture allows for improved random read throughput compared to previous-generation storage. Notably, the write bandwidth is 100% higher, while the read bandwidth is 75% higher than its predecessor.
To provide more specific details, Micron’s UFS 4.0 storage offers impressive sequential read speeds of up to 4,300Mbps and sequential write speeds of up to 4,000Mbps. These figures surpass Samsung’s UFS 4.0, particularly in terms of write performance.
In addition to its exceptional speed, the UFS 4.0 chips from Micron boast a 25% increase in power efficiency and promise a 10% reduction in write latency compared to earlier storage solutions. These advancements contribute to improved overall performance and energy efficiency in mobile devices utilizing Micron’s UFS 4.0 storage technology.